RFD12N06RLESM9A دیتاشیت

RFD12N06RLESM9A

مشخصات دیتاشیت

نام دیتاشیت RFD12N06RLESM9A
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت RFD12N06RLESM9A

دانلود دیتاشیت

سایر مستندات

RFD12N06RLESM 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi RFD12N06RLESM9A
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 49W
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 485pF@25V
  • Continuous Drain Current (Id): 18A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 63mΩ@10V,18A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: UltraFET™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 49W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: RFD12
  • detail: N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA

محصولات مشابه